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High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition

Type:
Conference Proceedings
Info:
2015 SID Symposium Digest of Technical Papers, Paper No S12.2
Date:
2015-09-21
DOI:
http://dx.doi.org/10.1002/sdtp.10529

Author Information

Name Institution
Hye In YeomKorea Advanced Institute of Science and Technology
Jong Bum KoKorea Advanced Institute of Science and Technology
Chi Sun HwangElectronics and Telecommunication Research Institute, (ETRI)
Sung Haeng ChoElectronics and Telecommunication Research Institute, (ETRI)
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films

Plasma In2O3

Hardware used: Unknown
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-250C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

484