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Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 15 (2) G1-G3 (2011)
Date:
2011-11-10
DOI:
http://dx.doi.org/10.1149/2.024202esl

Author Information

Name Institution
H. B. ProfijtEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
Ti(CpMe)(NMe2)3, Tris(dimethylamido)methylcyclopentadienyl titanium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Si(100)

Notes

669