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Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy

Type:
Journal
Info:
Applied Physics Letters 95, 013114 (2009)
Date:
2009-06-23
DOI:
http://dx.doi.org/10.1063/1.3176946

Author Information

Name Institution
Erwin (W.M.M.) KesselsEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
S. A. F. DielissenEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology

Films

Plasma Pt

Hardware used: Custom Remote Inductively Coupled Plasma
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal Pt

Hardware used: Custom
(Trimethyl)methylcyclopentadienylplatinum, MeCpMe3Pt
CAS#: 94442-22-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Silicon
Pt

Notes

PEALD Pt was used as the seed layer for the thermal ALD Pt which was the focus of the article.
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