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Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2

Type:
Conference Proceedings
Info:
ECS Transactions, 41 (2) 321-330 (2011)
Date:
2011-10-09
DOI:
http://dx.doi.org/10.1149/1.3633683

Author Information

Name Institution
Merijn E. DondersEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Peter H. L. NottenEindhoven University of Technology

Films

Plasma LiCoO2

Hardware used: Custom Remote Inductively Coupled Plasma
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
LiOt-Bu, LiOtBu, LTB, Lithium tert-butoxide, Lithium tertiary butoxide, LiOC4H9
CAS#: 1907-33-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Microstructure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Philips X'Pert MPD Diffactometer

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Renishaw Invia Raman

Characteristic: Charge Capacity
Analysis: Galvanostatic Cycling
Diagnostic: Maccor M2300 galvanostat

Characteristic: Electrochemical Performance
Analysis: Galvanostatic Cycling
Diagnostic: Maccor M2300 galvanostat

Substrates

Si with native oxide
SiO2
Pt

Notes

1438