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Plasma enhanced atomic layer deposition of Ga2O3 thin films

Type:
Journal
Info:
J. Mater. Chem. A, 2014, 2, 19232
Date:
2014-10-07
DOI:
http://dx.doi.org/10.1039/c4ta05007j

Author Information

Name Institution
Ranjith K. RamachandranGhent University
Jolien DendoovenGhent University
Jonas BottermanGhent University
Sreeprasanth Pulinthanathu SreeKU Leuven
Dirk PoelmanGhent University
Johan A. MartensKU Leuven
Hilde PoelmanGhent University
Christophe DetavernierGhent University

Films

Plasma Ga2O3

Hardware used: Custom
Ga(TMHD)3, Ga(THD)3, tris(2,2,6,6-tetramethyl- 3,5-heptanedionato) gallium, Gallium tetramethylheptanedionate
CAS#: 34228-15-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 75-400C

Thermal Ga2O3

Hardware used: Custom
Ga(TMHD)3, Ga(THD)3, tris(2,2,6,6-tetramethyl- 3,5-heptanedionato) gallium, Gallium tetramethylheptanedionate
CAS#: 34228-15-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Thermal Ga2O3

Hardware used: Custom
Ga(TMHD)3, Ga(THD)3, tris(2,2,6,6-tetramethyl- 3,5-heptanedionato) gallium, Gallium tetramethylheptanedionate
CAS#: 34228-15-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Band Gap
Analysis: Optical Transmission
Diagnostic: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Conformality, Step Coverage
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Hiden Analytical QMS

Substrates

SiO2
Quartz

Notes

Ga(TMHD)3 precursor thermally stable at 400C.
In situ XRD post deposition anneal.
Thermal H2O and O3 depositions at 300C yield very little growth.
PEALD Ga2O3 film development.
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