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Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 2, PP. 203-205, 2012
Date:
2011-10-29
DOI:
http://dx.doi.org/10.1109/LED.2011.2174607

Author Information

Name Institution
S. M. SultanUniversity of Southampton
K. SunUniversity of Southampton
O. D. ClarkUniversity of Southampton
T. B. MasaudUniversity of Southampton
Qi FangOxford Instruments
R. GunnOxford Instruments
J. PartridgeUniversity of Canterbury
M. W. AllenUniversity of Canterbury
P. AshburnUniversity of Southampton
H. M. H. ChongUniversity of Southampton

Films

Plasma ZnO

Hardware used: Oxford Instruments FlexAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Mobility
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Notes

645