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Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 108 - 112
Date:
2015-04-12
DOI:
http://dx.doi.org/10.1016/j.mee.2015.04.076

Author Information

Name Institution
Mihaela I. PopoviciIMEC
A. RedolfiIMEC
Marc AoulaicheMicron Technology Belgium
J. A. van den BergUniversity of Huddersfield
B. DouhardIMEC
Johan SwertsIMEC
P. BaileyUniversity of Huddersfield
B. KaczerIMEC
Benjamin GrovenIMEC
Johan MeersschautIMEC
Thierry ConardIMEC
A. MoussaIMEC
Christoph AdelmannIMEC
Annelies DelabieIMEC
P. FazanMicron Technology Belgium
Sven Van ElshochtIMEC
M. JurczakIMEC

Films

Plasma Ru

Hardware used: Unknown
(ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru(0), EBECHRu
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 225-325C

Plasma Ru

Hardware used: Unknown
dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C16H22O6Ru)
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 225-325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Thickness
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Microstructure
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

TiN
SrTiO3

Notes

553