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A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 51 065102
Date:
2018-01-02
DOI:
http://dx.doi.org/10.1088/1361-6463/aaa4a2

Author Information

Name Institution
Jidong JinUniversity of Liverpool
Jiawei ZhangUniversity of Manchester
Andrew ShawUniversity of Liverpool
Valeriya N KudinaNational Academy of Science of Ukraine
Ivona Z. MitrovicUniversity of Liverpool
Jacqueline S. WrenchUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Claudio BaloccoDurham University
Aimin SongUniversity of Manchester
Steve HallUniversity of Liverpool

Films

Plasma ZnO

Hardware used: Oxford Instruments OpAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 80C

Film/Plasma Properties

Characteristic: Etch Rate
Analysis: -
Diagnostic: -

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Substrates

Ti

Notes

ZnO etch rate in acetic acid discussed.
1525