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Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals

Type:
Journal
Info:
Surface Science 596 (2005) 1–11
Date:
2005-09-15
DOI:
http://dx.doi.org/10.1016/j.susc.2005.08.019

Author Information

Name Institution
Trinh Tu VanUniversity of California - Los Angeles (UCLA)
Jane P. ChangUniversity of California - Los Angeles (UCLA)

Films

Plasma Y2O3

Hardware used: Custom
tris(2,2,6,6-tetramethyl-3,5-heptanedionato) yttrium Y(tmhd)3
CAS#: 15632-39-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-400C

Plasma Er2O3

Hardware used: Custom
Er(TMHD)3, Er(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Erbium dipivaloylmethanate
CAS#: 35733-23-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-400C

Film/Plasma Properties

Characteristic: Unknown
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: Maxtek, Inc. BSH-150

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG ESCALAB 5

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope 3A

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4700

Substrates

TaN
SiO2
Si(100)

Notes

50