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Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 31, 01A142 (2013)
Date:
2012-11-28
DOI:
http://dx.doi.org/10.1116/1.4771666

Author Information

Name Institution
Yumi KawamuraNara Institute of Science and Technology
Nozomu HattoriMitsui Engineering & Shipbuilding Co., Ltd.
Naomasa MiyatakeMitsui Engineering & Shipbuilding Co., Ltd.
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

SiO2

Notes

635