Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Type:

Journal

Info:

J. Vac. Sci. Technol. A 32(3), May/Jun 2014

Date:

2014-04-02

DOI:

http://dx.doi.org/10.1116/1.4871455

Author Information

Name	Institution
Ki-Moon Jeon	Korea Research Institute of Standards and Science (KRISS)

Hardware used: ForALL OZONE

CAS#: 6485-79-6

CAS#: 7782-44-7

Deposition Temperature = 50C

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