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Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 47, September 2005, pp. S292~S295
Date:
2005-02-05
DOI:
http://dx.crossref.org/10.3938/jkps.47.292

Author Information

Name Institution
Sang-A LeePusan National University
Jae-Yeol HwangKorean Basic Science Institute
Jong-Pil KimKorean Basic Science Institute
Chae-Ryong ChoKorean Basic Science Institute
Won-Jae LeeDong-Eui University
Se-Young JeongPusan National University

Films

Plasma Ga2O3

Hardware used: Unknown
Unknown
CAS#: Unknown
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4200

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope IV

Characteristic: Interface State Density
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-F, Capacitance-Frequency Meaurements
Diagnostic: HP 4294A

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4294A

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4294A

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4294A

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(100)

Notes

18