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Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells

Type:
Journal
Info:
J. Mater. Chem. C, 2019, 7, 12532-12543
Date:
2019-09-17
DOI:
http://dx.doi.org/10.1039/C9TC04282B

Author Information

Name Institution
Dibyashree KoushikEindhoven University of Technology
Marko JoštHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Algirdas DučinskasEindhoven University of Technology
Claire BurgessEindhoven University of Technology
Valerio ZardettoSolliance Solar Research
Christ WeijtensEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Steve AlbrechtHelmholtz-Zentrum Berlin für Materialien und Energie GmbH
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma NiOx

Hardware used: Custom Remote Inductively Coupled Plasma
(MeCp)2Ni, Ni(C5H4CH3)2, Bis(methylcyclopentadienyl)nickel(II), 1,1'-Dimethylnickelocene
CAS#: 1293-95-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: Dataphysics OCA 15+

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4100

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Valence Band Maximum
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: VG EscaLab II

Characteristic: Ionization Energy
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: VG EscaLab II

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Characteristic: Carrier Concentration
Analysis: EIS, Electrochemical Impedance Spectroscopy
Diagnostic: Custom

Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Wavelabs LED Sun Simulator

Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Wavelabs LED Sun Simulator

Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Wavelabs LED Sun Simulator

Characteristic: Power Conversion Efficiency
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Wavelabs LED Sun Simulator

Characteristic: EQE, External Quantum Efficiency
Analysis: Custom
Diagnostic: Otsuka MCPD-3000

Substrates

Silicon

Notes

1598