About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

(MeCp)2Ni, Ni(C5H4CH3)2, Bis(methylcyclopentadienyl)nickel(II), 1,1'-Dimethylnickelocene, CAS# 1293-95-4

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 3 record(s).

NumberTitle
1Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
2Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
3Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries