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Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200°C

Type:
Journal
Info:
2020 J. Phys. D: Appl. Phys. 53 165103
Date:
2020-01-22
DOI:
http://dx.doi.org/10.1088/1361-6463/ab6e97

Author Information

Name Institution
Dianne C. CorsinoNara Institute of Science and Technology
Juan Paolo S. BermundoNara Institute of Science and Technology
Mami N. FujiiNara Institute of Science and Technology
Kiyoshi TakahashiNippon Aluminum Alkyls, Ltd.
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: JSW-Afty AFTEX-600
DMAlH, Dimethylaluminumhydride, Me2AlH, (CH3)2AlH
CAS#: 865-37-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

IGZO

Notes

1727