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Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (8) G169-G172 (2011)
Date:
2011-06-01
DOI:
http://dx.doi.org/10.1149/1.3594766

Author Information

Name Institution
Woo-Hee KimYonsei University
Min-Kyu KimYonsei University
Wan Joo MaengSamsung Electronics Co.
Julien GatineauAir Liquide
Venkat PallemAir Liquide
Christian DussarratAir Liquide
Atif NooriApplied Materials
David ThompsonApplied Materials
Schubert ChuApplied Materials
Hyungjun KimYonsei University

Films

Plasma CeO2

Hardware used: SNTEK Co. ALD 5008
tris(isopropylcyclopentadienyl) cerium, Ce(i-PrCp)3
CAS#: 122528-16-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Evaporation Characteristics
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

Films underwent O2 anneal.
Substrates RCA cleaned + HF dipped.
37