Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition

Type:
Conference Proceedings
Info:
ECS Trans. 2014 volume 64, issue 9, 15-21
Date:
2014-10-06
DOI:
http://dx.doi.org/10.1149/06409.0015ecst

Author Information

Name Institution
Gu Young ChoSeoul National University

Films

Plasma Y2O3

Hardware used: CN1 Atomic Premium
Tris(methylcyclopentadienyl)yttrium(III), (MeCp)3Y
CAS#: 329735-72-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 175-325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

Si(100)

Notes

PEALD development of Y2O3 film.
288