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Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2013 volume 2, issue 5, N110-N114
Date:
2013-02-25
DOI:
http://dx.doi.org/10.1149/2.010305jss

Author Information

Name Institution
Daming WeiKansas State University
T. HossainKansas State University
Nelson Y. GarcesU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
H. M. Meyer IIIOak Ridge National Laboratory
M. J. KirkhamOak Ridge National Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
J. H. EdgarKansas State University

Films

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

Si(100)

Notes

597