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Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021515 (2018)
Date:
2018-01-09
DOI:
http://dx.doi.org/10.1116/1.5001552

Author Information

Name Institution
Shinya IwashitaTokyo Electron Technology Solutions, Ltd.
Tsuyoshi MoriyaTokyo Electron Technology Solutions, Ltd.
Takamichi KikuchiTokyo Electron Technology Solutions, Ltd.
Munehito KagayaTokyo Electron Technology Solutions, Ltd.
Naotaka NoroTokyo Electron Technology Solutions, Ltd.
Toshio HasegawaTokyo Electron Technology Solutions, Ltd.
Akira UedonoUniversity of Tsukuba

Films

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Porosity
Analysis: PAS, Positron Annihilation Spectroscopy
Diagnostic: -

Characteristic: Porosity
Analysis: Ellipsometric Porosimetry (EP)
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Characteristic: Ion Energy
Analysis: Ion Energy Analyzer
Diagnostic: Custom

Characteristic: Electron Density, ne
Analysis: Plasma Absorption Probe
Diagnostic: Custom

Substrates

Si(100)

Notes

1271