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Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 031512 (2015)
Date:
2015-04-03
DOI:
http://dx.doi.org/10.1116/1.4917552

Author Information

Name Institution
Bodo KalkofenOtto-von-Guericke University
Akinwumi A. AmusanOtto-von-Guericke University
Muhammad S. K. BukhariOtto-von-Guericke University
Bernd GarkeOtto-von-Guericke University
Marco LiskerIHP
Hassan GargouriSentech Instruments GmbH
Edmund P. BurteOtto-von-Guericke University

Films

Plasma B2O3

Hardware used: Custom Microwave Plasma
3DMAB, TDMAB, (Me2N)3B, (CH3)2N)3B, Tris(dimethylamido)borane
CAS#: 4375-83-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-150C

Plasma Sb2O5

Hardware used: Custom Microwave Plasma
TMSb, trimethyl antimony, SbMe3
CAS#: 594-10-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE850

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: CDE ResMap 168

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: Cameca IMS Wf SIMS

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Notes

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