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Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

Type:
Journal
Info:
Journal of Applied Physics 120, 085315 (2016)
Date:
2016-07-19

Author Information

Name Institution
Ahmad ChakerGrenoble Alps University (UGA)
P. D. SzkutnikGrenoble Alps University (UGA)
John PointetGrenoble Alps University (UGA)
Patrice GononGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)
Ahmad BsiesyGrenoble Alps University (UGA)

Films

Plasma TiO2


Thermal TiO2


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

RuO2

Notes

909