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Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer

Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 67 - 71
Date:
2015-04-06
DOI:
http://dx.doi.org/10.1016/j.mee.2015.04.026

Author Information

Name Institution
Yan-Lin LiNational Tsing Hua University
Kuei-Shu Chang-LiaoNational Tsing Hua University
Chen-Chien LiNational Tsing Hua University
Li-Ting ChenNational Tsing Hua University
Tzu-Hsiang SuNational Tsing Hua University
Yu-Wei ChangNational Tsing Hua University
Ting-Chun ChenNational Tsing Hua University
Chia-Chi TsaiNational Tsing Hua University
Chia-Hung KaoNational Tsing Hua University
Hao-Ting FengNational Tsing Hua University
Yao-Jen LeeNational Tsing Hua University

Films

Other HfON

Hardware used: Unknown
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Other HfON

Hardware used: Unknown
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: On/Off Current Ratio
Analysis: -
Diagnostic: -

Characteristic: Subthreshold Swing
Analysis: -
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: -
Diagnostic: -

Substrates

Silicon

Notes

465