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Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 282 (2013) 390 - 395
Date:
2013-05-28
DOI:
http://dx.doi.org/10.1016/j.apsusc.2013.05.141

Author Information

Name Institution
Jian ZhangZhejiang University
Hui YangZhejiang University
Qi-long ZhangZhejiang University
Shurong DongZhejiang University
J.K. LuoZhejiang University

Films

Plasma ZnO

Hardware used: Kurt J Lesker ALD-150LX
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-300C

Thermal ZnO

Hardware used: Kurt J Lesker ALD-150LX
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 100-300C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Diagnostic: BIO-RAD HL5500

Characteristic: Electron Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: BIO-RAD HL5500

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Diagnostic: BIO-RAD HL5500

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Sirion-100

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Sirion-100

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Acton SpectroPro SP-2500

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Si(100)
Glass

Notes

602