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Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices

Type:
Conference Proceedings
Info:
2016 46th European Solid-State Device Research Conference (ESSDERC)
Date:
2016-09-12
DOI:
http://dx.doi.org/10.1109/ESSDERC.2016.7599611

Author Information

Name Institution
K. FleckRWTH Aachen University
U. BöttgerRWTH Aachen University
R. WaserRWTH Aachen University
N. AslamPeter-Grünberg Institute
Susanne Hoffmann-EifertPeter-Grünberg Institute
S. MenzelPeter-Grünberg Institute

Films

Plasma SrTiO3

Hardware used: Oxford Instruments FlexAL
Hyper-Sr, bis(tri-isopropylcyclopentadienyl)strontium with 1,2-demethoxy-ethane adduct, Sr(iPr3Cp)2DME
CAS#: 0-0-0
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Film/Plasma Properties

Substrates

Notes

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