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Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition

Type:
Journal
Info:
ACS Nano, 2013, 7 (12), pp 11333-11340
Date:
2013-11-19
DOI:
http://dx.doi.org/10.1021/nn405194e

Author Information

Name Institution
Jeong-Gyu SongYonsei University
Jusang ParkYonsei University
Wonseon LeeYonsei University
Taejin ChoiYonsei University
Hanearl JungYonsei University
Chang Wan LeeYonsei University
Sung-Hwan HwangYonsei University
Jae Min MyoungYonsei University
Jae-Hoon JungYeungnam University
Clement Lansalot-MatrasAir Liquide
Hyungjun KimYonsei University

Films

Plasma WO3

Hardware used: Custom
Bis(isopropyl cyclopentadienyl) tungsten(IV) dihydride, WH2(iPrCp)2
CAS#: 64561-25-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Images
Analysis: Optical Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Raman Shift
Analysis: Raman Spectroscopy
Diagnostic: -

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Electron Mobility
Analysis: -
Diagnostic: -

Characteristic: Subthreshold Swing
Analysis: -
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: -

Characteristic: Elemental Mapping
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

Thermal ALD HfO2 used for high-k gate dielectric on FET tests.
137