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Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition

Type:
Journal
Info:
Materials Letters, Volume 246, Pages 1-4
Date:
2019-03-19
DOI:
https://doi.org/10.1016/j.matlet.2019.03.018

Author Information

Name Institution
Dong-Kwon LeeHynix Semiconductor
Se-Hun KwonPusan National University
Ji-Hoon AhnKorea Maritime and Ocean University

Films

Plasma TiO2

Hardware used: Custom
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Plasma SnO2

Hardware used: Custom
Tin Tetrachloride, SnCl4
CAS#: 7646-78-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Plasma Sn:TiO2

Hardware used: Custom
Tin Tetrachloride, SnCl4
CAS#: 7646-78-8
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

TiN
SnO2

Notes

1568