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High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Type:
Journal
Info:
J. Mater. Chem. C, 2016, 4, 6873-6880
Date:
2016-06-22
DOI:
http://dx.doi.org/10.1039/C6TC00580B

Author Information

Name Institution
Hye In YeomKorea Advanced Institute of Science and Technology
Jong Bum KoKorea Advanced Institute of Science and Technology
Gum Bi MunKorea Advanced Institute of Science and Technology
Sang-Hee Ko ParkKorea Advanced Institute of Science and Technology

Films

Plasma In2O3

Hardware used: Unknown
Et2InN(SiMe3)2, Et2In(HMDS), DiEthyl Indium HexaMethylDiSilazane, DiEthyl Indium Bis(trimethylsilyl)amine, Bis(trimethysilyl)amidodiethyl Indium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: Accent HL5500

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Accent HL5500

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Accent HL5500

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Si(100)
Al2O3
ITO

Notes

Used unknown "Genie" ALD system.
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