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Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 27, 761-766 (2009)
Date:
2009-03-23
DOI:
http://dx.doi.org/10.1116/1.3119673

Author Information

Name Institution
Pieter RowletteColorado School of Mines
Cary G. AllenColorado School of Mines
Olivia B. BromleyColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DMZ, DiMethylZinc, ZnMe2, Zn(CH3)2
CAS#: 544-97-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-155C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Siemens Kristalloflex 810

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Nexus 870

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: SPEX 1691 Fluorolog

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope III

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Accent HL5500

Substrates

Silicon

Notes

757