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Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2012, 4(6), pp 3122-3128
Date:
2012-05-11
DOI:
http://dx.doi.org/10.1021/am300458q

Author Information

Name Institution
Matthew A. ThomasUniversity of Arkansas at Little Rock
J.B. CuiUniversity of Arkansas at Little Rock

Films

Plasma ZnO

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7000F

Characteristic: Optical Properties
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Diagnostic: Custom

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: Custom

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Diagnostic: Custom

Substrates

Notes

24