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Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors

Type:

Journal

Info:

Journal of Vacuum Science & Technology A 31, 031509 (2013)

Date:

2013-03-12

DOI:

http://dx.doi.org/10.1116/1.4798385

Author Information

Name	Institution
Rohan P. Chaukulkar	Colorado School of Mines
Sumit Agarwal	Colorado School of Mines

Films

Plasma TiO₂

Hardware used: Custom

TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)₄

CAS#: 546-68-9

O₂, Oxygen

CAS#: 7782-44-7

Deposition Temperature = 150C

Film/Plasma Properties

Substrates

ZnSe

Notes

The plasma ALD TiO₂ film was just the substrate for the main study of the paper which was thermal ALD TiO₂ from TTIP and TiCl₄.
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