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A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 14 (7) H271-H273 (2011)
Date:
2011-03-18
DOI:
http://dx.doi.org/10.1149/1.3579240

Author Information

Name Institution
A. CacciatoIMEC
L. BreuilIMEC
H. DekkerIMEC
M. ZahidIMEC
G. S. KarIMEC
J.L. EveraertIMEC
G. SchoofsIMEC
X. ShiIMEC
G. Van den boschIMEC
M. JurczakIMEC
I. DebusschereIMEC
J. Van HoudtIMEC
Andrew CockburnApplied Materials
Lucien DateApplied Materials
Li-Qun XaApplied Materials
Maggie LeApplied Materials
Won LeeApplied Materials

Films

Plasma SiO2

Hardware used: Unknown
OMCTS, (CH3)2SiO-)4, OctaMethylCycloTetraSiloxane
CAS#: 556-67-2
He, Helium
CAS#: 7440-59-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: Non-contact Corona C-V
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: Non-contact Corona C-V
Diagnostic: -

Characteristic: Thickness
Analysis: Non-contact Corona C-V
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

1362