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Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A110 (2016)
Date:
2015-10-01
DOI:
http://dx.doi.org/10.1116/1.4933169

Author Information

Name Institution
Yu-Chang LinNational Cheng Kung University
Hsin-Ying LeeNational Cheng Kung University
Tsung-Hsin LeeMetal Industries Research and Development Centre

Films

Plasma ZnO

Hardware used: Unknown
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Alpha-Step Profilometer

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-7001F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Electrical Properties
Analysis: -
Diagnostic: Agilent 4156C

Characteristic: Photoconductance
Analysis: -
Diagnostic: -

Substrates

Sapphire

Notes

403