About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition

Type:
Journal
Info:
Journal of Electronic Materials Volume 47, Issue 11, 2018, Pages 6709-6715
Date:
2018-07-26
DOI:
http://dx.doi.org/10.1007/s11664-018-6555-4

Author Information

Name Institution
Tianjun DaiUniversity of Electronic Science and Technology of China
Yixuan RenUniversity of Electronic Science and Technology of China
Lingxuan QianUniversity of Electronic Science and Technology of China
Xingzhao LiuUniversity of Electronic Science and Technology of China

Films

Plasma MoOx

Hardware used: Custom Remote Inductively Coupled Plasma
Molybdenum hexacarbonyl, Mo(CO)6
CAS#: 13939-06-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 162C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos XSAM800

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos XSAM800

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Multimode 8

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: PERSEE TU-1810b

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Renishaw Invia Raman

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6400

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155B Semiconductor Parameter Analyzer

Substrates

Si(100)
Si(111)
Quartz

Notes

1615