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Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39(3) 2021 032416
Date:
2021-04-12
DOI:
http://dx.doi.org/10.1116/6.0000649

Author Information

Name Institution
Taguhi YeghoyanGrenoble Alps University (UGA)
Vincent PesceGrenoble Alps University (UGA)
Moustapha JaffalGrenoble Alps University (UGA)
Jaan AarikGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
Nicolas PossemeCEA - LETI MINATEC
Marceline BonvalotGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)

Films

Plasma Ta2O5

Hardware used: Oxford Instruments FlexAL
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Scientific AutoSE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Scientific AutoSE

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Merlin

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Merlin

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Substrates

Si with native oxide

Notes

1713