About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:64, Issue:3, 2017
Date:
2017-01-20
DOI:
http://dx.doi.org/10.1109/TED.2016.2647284

Author Information

Name Institution
Jidong JinUniversity of Liverpool
Jacqueline S. WrenchUniversity of Liverpool
James T. GibbonUniversity of Liverpool
David HespUniversity of Liverpool
Andrew ShawUniversity of Liverpool
Ivona Z. MitrovicUniversity of Liverpool
Naser SedghiUniversity of Liverpool
Laurie J. PhillipsUniversity of Liverpool
Jianli ZouUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Steve HallUniversity of Liverpool

Films

Plasma ZnO

Hardware used: Oxford Instruments OpAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-120C

Film/Plasma Properties

Characteristic: Ideality Factor
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: On/Off Current Ratio
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Doping Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Ti

Notes

1135