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Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 44, No. 1, pp. 35-38
Date:
2003-12-03
DOI:
http://www.jkps.or.kr/journal/download_pdf.php?spage=35&volume=44&number=1

Author Information

Name Institution
Sungwoo ChoiHanyang University
Jaehyoung KooHanyang University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University

Films

Plasma HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

1239