Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 102, 012113 (2013)
Date:
2012-12-20
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
| Hui Yang | Zhejiang University |
| Qi-long Zhang | Zhejiang University |
| Shurong Dong | Zhejiang University |
| J.K. Luo | Zhejiang University |
Films
Plasma ZnO
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Substrates
| Pt |
Notes
| 632 |