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Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices

Type:
Journal
Info:
J. Appl. Phys. 116, 064503 (2014)
Date:
2014-07-21
DOI:
http://dx.doi.org/10.1063/1.4891831

Author Information

Name Institution
N. AslamPeter-Grünberg Institute
Valentino LongoEindhoven University of Technology
C. RodenbücherPeter-Grünberg Institute
Fred RoozeboomEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
K. SzotPeter-Grünberg Institute
R. WaserPeter-Grünberg Institute
Susanne Hoffmann-EifertPeter-Grünberg Institute

Films

Plasma SrTiO3

Hardware used: Oxford Instruments FlexAL
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
Hyper-Sr, bis(tri-isopropylcyclopentadienyl)strontium with 1,2-demethoxy-ethane adduct, Sr(iPr3Cp)2DME
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: -
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi SU-8000

Characteristic: Morphology, Roughness, Topography
Analysis: Local-Conductivity Atomic Force Microscopy
Diagnostic: JEOL JSPM-5200

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Pt

Notes

Oxford Instruments FlexAL PEALD SrTiO3 for resistive switching application.
600C post deposition anneal in N2 for crystallization into perovskite structure.
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