Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

Type:
Journal
Info:
Materials 2015, 8, 5425
Date:
2015-11-12
DOI:
http://dx.doi.org/10.3390/ma8115425

Author Information

Name Institution
Stephan RatzschFriedrich-Schiller-Universität Jena
Ernst-Bernhard KleyFriedrich-Schiller-Universität Jena
Andreas TünnermannFriedrich-Schiller-Universität Jena
Adriana SzeghalmiFriedrich-Schiller-Universität Jena

Films

Plasma TiO2

Hardware used: Oxford Instruments OpAL
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Substrates

Notes

413