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Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

Type:
Journal
Info:
Microelectronic Engineering 97 (2012) 162 - 165
Date:
2012-05-28
DOI:
http://dx.doi.org/10.1016/j.mee.2012.04.019

Author Information

Name Institution
S. M. SultanUniversity of Southampton
O. D. ClarkUniversity of Southampton
T. B. MasaudUniversity of Southampton
Ziwen FangOxford Instruments
R. GunnOxford Instruments
M.M.A. HakimUniversity of Southampton
K. SunUniversity of Southampton
P. AshburnUniversity of Southampton
H. M. H. ChongUniversity of Southampton

Films

Plasma ZnO

Hardware used: Oxford Instruments FlexAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: -

Substrates

SiO2
Quartz

Notes

664