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Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022412 (2020)
Date:
2020-01-13
DOI:
http://dx.doi.org/10.1116/1.5134738

Author Information

Name Institution
Fumikazu MizutaniKojundo Chemical Laboratory Co., Ltd.
Shintaro HigashiKojundo Chemical Laboratory Co., Ltd.
Mari InoueNational Institute for Materials Science (NIMS)
Toshihide NabatameNational Institute for Materials Science (NIMS)

Films

Thermal Ga2O3

Hardware used: Picosun R200
Me5CpGa, Pentamethylcyclopentadienyl Gallium
CAS#: 0-0-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Thermal Ga2O3

Hardware used: Picosun R200
Me5CpGa, Pentamethylcyclopentadienyl Gallium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma Ga2O3

Hardware used: Picosun R200
Me5CpGa, Pentamethylcyclopentadienyl Gallium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal Ga2O3

Hardware used: Picosun R200
Me5CpGa, Pentamethylcyclopentadienyl Gallium
CAS#: 0-0-0
H2O, Water
CAS#: 7732-18-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Other Ga2O3

Hardware used: Picosun R200
Me5CpGa, Pentamethylcyclopentadienyl Gallium
CAS#: 0-0-0
H2O, Water
CAS#: 7732-18-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Compositional Depth Profiling
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: Kobe Steel HRBS500

Characteristic: Compositional Depth Profiling
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: Ulvac-Phi ADEPT-1010

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Precursor Vapor Pressure
Analysis: Vapor Pressure
Diagnostic: -

Substrates

Si with native oxide

Notes

1433