Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

Type:
Journal
Info:
Surface & Coatings Technology 326 (2017) 281 - 290
Date:
2017-07-23

Author Information

Name Institution
Mari NapariUniversity of Jyväskylä
Manu LahtinenUniversity of Jyväskylä
Alexey VeselovPicosun Oy
Jaakko JulinUniversity of Jyväskylä
Erik ØstrengPicosun Oy
Timo SajavaaraUniversity of Jyväskylä

Films

Plasma ZnO

Hardware used: Picosun R200


CAS#: 7782-44-7

Plasma ZnO

Hardware used: Beneq TFS-200


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: ATR-FTIR

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Substrates

Si(100)
Polycarbonate
PMMA, poly(methyl methacrylate)

Notes

Beneq plasma run in both direct and remote mode.
1401