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Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films

Type:
Journal
Info:
J. Phys. Chem. C, 2015, 119 (21), pp 11786-11791
Date:
2015-05-08
DOI:
http://dx.doi.org/10.1021/acs.jpcc.5b03255

Author Information

Name Institution
Ranjith K. RamachandranGhent University
Jolien DendoovenGhent University
Hilde PoelmanGhent University
Christophe DetavernierGhent University

Films

Plasma In2O3

Hardware used: Custom
In(TMHD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) indium
CAS#: 34269-03-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Transmittance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Hiden Analytical QMS

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: XRF, X-Ray Fluorescence
Diagnostic: Bruker D8 Discover

Characteristic: Conformality, Step Coverage
Analysis: XRF, X-Ray Fluorescence
Diagnostic: Bruker D8 Discover

Substrates

SiO2

Notes

352