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Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations

Type:
Journal
Info:
Sensors and Actuators B 147 (2010) 653-659
Date:
2010-03-27
DOI:
http://dx.doi.org/10.1016/j.snb.2010.03.065

Author Information

Name Institution
Dai-Hong KimSeoul National University
Won-Sik KimSeoul National University
Sung Bo LeeSeoul National University
Seong-Hyeon HongSeoul National University

Films

Plasma SnO2

Hardware used: Custom
DiButylTinDiAcetate, DBTDA, ((CH3CO2)2Sn[(CH2)3CH3]2)
CAS#: 1067-33-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: MAC Scientific Co., M18XHF

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: X-ray Pole Figure
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko SPA-400

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Characteristic: Gas Sensing
Analysis: Custom
Diagnostic: -

Substrates

TiO2(100)
TiO2(001)
TiO2(110)
TiO2(101)

Notes

600C post deposition anneal.
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