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Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications

Type:
Journal
Info:
Nanotechnology 31 (apr) 255603
Date:
2020-02-12
DOI:
http://dx.doi.org/10.1088/1361-6528/ab7593

Author Information

Name Institution
Akhil SharmaEindhoven University of Technology
Reyhaneh MahloujiEindhoven University of Technology
Longfei WuEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Vincent VandalonEindhoven University of Technology
Shashank BalasubramanyamEindhoven University of Technology
Jan P. HofmannEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Ageeth A. BolEindhoven University of Technology

Films

Plasma MoOx

Hardware used: Oxford Instruments FlexAL
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Plasma WO3

Hardware used: Oxford Instruments FlexAL
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000F

Substrates

SiO2

Notes

1642