About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Type:
Journal
Info:
Nanomaterials 2021, 11, 978
Date:
2021-04-07
DOI:
http://dx.doi.org/10.3390/nano11040978

Author Information

Name Institution
Ming-Jie ZhaoXiamen University of Technology
Zhi-Xuan ZhangXiamen University of Technology
Chia-Hsun HsuXiamen University of Technology
Xiao-Ying ZhangXiamen University of Technology
Wan-Yu WuDa-Yeh University
Shui-Yang LienXiamen University of Technology
Wen-Zhang ZhuXiamen University of Technology

Films

Plasma In2O3

Hardware used: Picosun R200
Cyclopentadienylindium(I), InCp
CAS#: 34822-89-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Rigaku TTRAX III

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Sigma

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: Hong-Ming Technology MFS-630

Characteristic: Reflectance Spectra
Analysis: Optical Reflectivity
Diagnostic: Hong-Ming Technology MFS-630

Characteristic: Optical Bandgap
Analysis: Optical Transmission
Diagnostic: Hong-Ming Technology MFS-630

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Side Semiconductor Technology HMS-500

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: Side Semiconductor Technology HMS-500

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Side Semiconductor Technology HMS-500

Substrates

Silicon
Glass

Notes

1658