Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
physica status solidi (a) Volume 211, Issue 2, pages 416-424, 2014
Date:
2013-09-19
DOI:
http://dx.doi.org/10.1002/pssa.201330115

Author Information

Name Institution
Van-Son DangRuhr-University Bochum
Harish ParalaRuhr-University Bochum
Jin Hyun KimRuhr-University Bochum
Ke XuRuhr-University Bochum
Nagendra B. SrinivasanRuhr-University Bochum
Eugen EdengeiserRuhr-University Bochum
Martina HavenithRuhr-University Bochum
Andreas D. WieckRuhr-University Bochum
Teresa de los ArcosRuhr-University Bochum
Roland A. FischerRuhr-University Bochum
Anjana DeviRuhr-University Bochum

Films

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Ti(NMe2)3(guan), tris(dimethylamido) (N,N' diisopropyl-2-dimethylamidoguanidinato) titanium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-225C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Optical Absorption
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: Alpha 300R Confocal Raman Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)
Glass

Notes

1379