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Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2018, 10 (36), pp 30367-30378
Date:
2018-08-16
DOI:
http://dx.doi.org/10.1021/acsami.8b09515

Author Information

Name Institution
Yinghuan KuangEindhoven University of Technology
Valerio ZardettoTNO
Roderick van GilsEindhoven University of Technology
Saurabh KarwalEindhoven University of Technology
Dibyashree KoushikEindhoven University of Technology
Marcel A. VerheijenEindhoven University of Technology
Lachlan E. BlackEindhoven University of Technology
Christ WeijtensEindhoven University of Technology
Sjoerd VeenstraSolliance Solar Research
Ronn AndriessenTNO
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma SnO2

Hardware used: Oxford Instruments OpAL
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Transmittance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Reflectance Spectra
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Dimension 3100

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM ARM 200

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: JEOL JEM ARM 200

Characteristic: UV-Vis Transmission
Analysis: UV-VIS Spectroscopy
Diagnostic: Varian-Cary 5000 spectrophotometer

Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: VG EscaLab II

Characteristic: Band Gap
Analysis: FTPS, Fourier Transform Photocurrent Spectroscopy
Diagnostic: -

Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Characteristic: Power Conversion Efficiency
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-5300

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Helios Nanolab600

Substrates

Si(100)
ITO

Notes

1296