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Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation

Type:
Journal
Info:
Chem. Mater. 2017, 29, 921-925
Date:
2017-01-23
DOI:
http://dx.doi.org/10.1021/acs.chemmater.6b04469

Author Information

Name Institution
Alfredo MameliEindhoven University of Technology
Yinghuan KuangEindhoven University of Technology
Morteza AghaeeLappeenranta University of Technology
Chaitanya Krishna AndeEindhoven University of Technology
Bora KarasuluEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology
Adriaan J. M. MackusEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Fred RoozeboomEindhoven University of Technology

Films

Other In2O3

Hardware used: Oxford Instruments OpAL
Cyclopentadienylindium(I), InCp
CAS#: 34822-89-4
O2, Oxygen
CAS#: 7782-44-7
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Area Selectivity
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Area Selectivity
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si-H
SiO2

Notes

1190