Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 55 085105
Date:
2021-11-03

Author Information

Name Institution
S. O'DonnellDublin City University
F. JoseDublin City University
K. ShielDublin City University
M. SnelgroveDublin City University
C. McFeelyDublin City University
E. McGillDublin City University
R. O'ConnorDublin City University

Films


Thermal TiO2



Plasma TiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Nucleation
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Photoelectrochemical (PEC) Activity
Analysis: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Silicon

Keywords

Photoelectrochemical (PEC) water splitting
Plasma vs Thermal Comparison
Precursor Comparison

Notes

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